SEU Threshold model and its experimental verification

Author

Palomo, F.R. ; Mogollon, J.M. ; Morilla, Y. ; Garcia-Lopez, J. ; Jimenez-Ramos, M.C. ; Labrador, J.A. ; Cortes-Giraldo, M.A. ; Quesada, J.M. ; Aguirre, M.A.

Author_Institution

Electron. Eng. Dept., Sevilla Univ., Sevilla, Spain

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

420

Lastpage

425

Abstract

This work presents a simplified procedure to obtain the ionization profile from SRIM2010 and the Katz radial dose model applied to oxygen ions with kinetic energy from 12 to 18 MeV. Device simulation of Single Event Upsets needs LET(z) and w(z) (linear energy transfer and lateral radius) as inputs. TCAD simulations with the calculated ionization profile of a digital test chip predicts a SEU Threshold. That threshold is experimentally confirmed using the ion microprobe of the Tandem Van de Graaf accelerator at the CNA facility (Spain), validating the ionization model.

Keywords

electronic engineering computing; radiation hardening (electronics); technology CAD (electronics); CNA facility; Katz radial dose model; LET; SEU threshold model; SRIM2010; Spain; TCAD simulations; Tandem Van de Graaf accelerator; device simulation; digital test chip; experimental verification; ion microprobe; ionization model validation; ionization profile; kinetic energy; lateral radius; linear energy transfer; oxygen ions; single-event upsets; Acceleration; Computational modeling; Indexes; Ions; Predictive models; Low energy accelerators; SEU; Spice; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131418

Filename

6131418