Title :
InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 μm
Author :
Carlin, J.-F. ; Syrbu, A.V. ; Berseth, C.-A. ; Behrend, J. ; Rudra, A. ; Kapon, E.
Author_Institution :
Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
Abstract :
We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 μm wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm-1 losses per well, and 33 A/cm2 transparency current density per well, which equal or even surpass the best published characteristics for 1.55 μm wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum wells were integrated in a strain-balanced laser which showed equally good characteristics
Keywords :
III-V semiconductors; indium compounds; quantum well lasers; 1.55 micron; 88 percent; InAsP; InAsP quantum well; horizontal cavity; internal efficiency; loss; multi-quantum well laser diode; strain relaxation; strain-balanced laser; threshold current density; transparency current density; Capacitive sensors; Current density; Diode lasers; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Satellites; Superlattices; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600229
