InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 μm

Author

Carlin, J.-F. ; Syrbu, A.V. ; Berseth, C.-A. ; Behrend, J. ; Rudra, A. ; Kapon, E.

Author_Institution

Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

fYear

1997

fDate

11-15 May 1997

Firstpage

563

Lastpage

566

Abstract

We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 μm wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm^-1 losses per well, and 33 A/cm² transparency current density per well, which equal or even surpass the best published characteristics for 1.55 μm wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum wells were integrated in a strain-balanced laser which showed equally good characteristics

Keywords

III-V semiconductors; indium compounds; quantum well lasers; 1.55 micron; 88 percent; InAsP; InAsP quantum well; horizontal cavity; internal efficiency; loss; multi-quantum well laser diode; strain relaxation; strain-balanced laser; threshold current density; transparency current density; Capacitive sensors; Current density; Diode lasers; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Satellites; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600229

Filename

600229