DocumentCode
3034600
Title
Large-signal FET models and a new AlGaN/GaN HFET model for power amplifier design
Author
Trew, R.J. ; Hou, Dong ; Schimizzi, R. ; Goswami, Anshuman ; Bilbro, Griff L.
Author_Institution
ECE Dept., North Carolina State Univ., Raleigh, NC, USA
fYear
2012
fDate
11-16 Nov. 2012
Firstpage
1
Lastpage
4
Abstract
A historical review of large-signal compact FET models is presented. Device models used in circuit design typically are based upon equivalent circuit techniques. However, it is possible to develop physics-based compact models. In this work, a new physics-based model for AlGaN/GaN HFETs that can be integrated into the commercial simulators is described. The new model has demonstrated good agreement between measured and simulated data for communications band power amplifiers.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; AlGaN-GaN; HFET model; circuit design; commercial simulator; communication band power amplifier; device model; equivalent circuit technique; large-signal compact FET model; power amplifier design; Equivalent circuits; HEMTs; Integrated circuit modeling; MODFETs; Mathematical model; Numerical models;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Information Technology and Systems (ICWITS), 2012 IEEE International Conference on
Conference_Location
Maui, HI
Print_ISBN
978-1-4673-0947-9
Type
conf
DOI
10.1109/ICWITS.2012.6417696
Filename
6417696
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