DocumentCode :
3034823
Title :
Piezoresistivity coefficients for semiconducting barium strontium titanate
Author :
Amin, Ahmed
Author_Institution :
Texas Instruments Inc., Attleboro, MA, USA
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
77
Lastpage :
81
Abstract :
The hydrostatic piezoresistance coefficient πh has been measured as a function of temperature for semiconducting barium strontium titanate. The measurements were taken over the temperature range from 298 to 415 K above the ferroelectric-paraelectric transition temperature Tc. Theoretical calculations of the grain boundary hydrostatic piezoresistivity coefficient πh as a function of temperature were carried out. Experimental and theoretical results are discussed
Keywords :
barium compounds; ferroelectric Curie temperature; ferroelectric semiconductors; grain boundaries; piezoresistance; strontium compounds; 298 to 415 K; BaSrTiO3; ferroelectric-paraelectric transition temperature; grain boundary hydrostatic piezoresistivity coefficient; hydrostatic piezoresistance coefficient; semiconductor; temperature dependence; titanate; Barium; Conductivity; Ferroelectric materials; Grain boundaries; Piezoresistance; Semiconductivity; Stress; Strontium; Temperature dependence; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200198
Filename :
200198
Link To Document :
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