Piezoresistivity coefficients for semiconducting barium strontium titanate

Author

Amin, Ahmed

Author_Institution

Texas Instruments Inc., Attleboro, MA, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

77

Lastpage

81

Abstract

The hydrostatic piezoresistance coefficient π_h has been measured as a function of temperature for semiconducting barium strontium titanate. The measurements were taken over the temperature range from 298 to 415 K above the ferroelectric-paraelectric transition temperature T_c. Theoretical calculations of the grain boundary hydrostatic piezoresistivity coefficient π_h as a function of temperature were carried out. Experimental and theoretical results are discussed

Keywords

barium compounds; ferroelectric Curie temperature; ferroelectric semiconductors; grain boundaries; piezoresistance; strontium compounds; 298 to 415 K; BaSrTiO₃; ferroelectric-paraelectric transition temperature; grain boundary hydrostatic piezoresistivity coefficient; hydrostatic piezoresistance coefficient; semiconductor; temperature dependence; titanate; Barium; Conductivity; Ferroelectric materials; Grain boundaries; Piezoresistance; Semiconductivity; Stress; Strontium; Temperature dependence; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200198

Filename

200198