Title :
Piezoresistivity coefficients for semiconducting barium strontium titanate
Author_Institution :
Texas Instruments Inc., Attleboro, MA, USA
Abstract :
The hydrostatic piezoresistance coefficient πh has been measured as a function of temperature for semiconducting barium strontium titanate. The measurements were taken over the temperature range from 298 to 415 K above the ferroelectric-paraelectric transition temperature Tc. Theoretical calculations of the grain boundary hydrostatic piezoresistivity coefficient πh as a function of temperature were carried out. Experimental and theoretical results are discussed
Keywords :
barium compounds; ferroelectric Curie temperature; ferroelectric semiconductors; grain boundaries; piezoresistance; strontium compounds; 298 to 415 K; BaSrTiO3; ferroelectric-paraelectric transition temperature; grain boundary hydrostatic piezoresistivity coefficient; hydrostatic piezoresistance coefficient; semiconductor; temperature dependence; titanate; Barium; Conductivity; Ferroelectric materials; Grain boundaries; Piezoresistance; Semiconductivity; Stress; Strontium; Temperature dependence; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200198