Title :
Analysis of SOI CMOS microprocessor´s SEE sensitivity: Correlation of the results obtained by different test methods
Author :
Gorbunov, Maxim S. ; Vasilegin, Boris V. ; Antonov, Andrey A. ; Osipenko, Pavel N. ; Zebrev, Gennady I. ; Anashin, Vasily S. ; Emeliyanov, Vladimir V. ; Ozerov, Alexander I. ; Useinov, Rustem G. ; Chumakov, Alexander I. ; Pechenkin, Alexander A. ; Yanenko
Author_Institution :
Comput. Eng. Dept., Sci. Res. Inst. of Syst. Anal., Moscow, Russia
Abstract :
The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques´ accuracy improvement are discussed.
Keywords :
CMOS digital integrated circuits; integrated circuit testing; microprocessor chips; radiation hardening (electronics); sensitivity analysis; silicon-on-insulator; SOI CMOS microprocessor SEE sensitivity analysis; data correction; particle accelerator; pulsed laser technique; single-event effect analysis; size 0.5 mum; test methods; Laser modes; Layout; Logic gates; Microprocessors; Radiation effects; Transistors; CMOS; Cf-252; SEE; SOI; heavy ions; laser; microprocessor;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131444
