DocumentCode
3035236
Title
Using RADFETs for alpha radiation dosimetry
Author
Sharp, R.E. ; Hofman, J. ; Holmes-Siedle, A.
Author_Institution
Isotron Ltd., Didcot, UK
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
747
Lastpage
750
Abstract
The effects of alpha irradiation on the charge in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show that these devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process.
Keywords
alpha-particles; dosimetry; field effect transistors; ion implantation; radiation effects; alpha irradiation effect; alpha radiation dosimetry; ion implantation process; monitoring process; radiation-sensing field-effect transistor; standard RADFET die; threshold voltage; Barium; Hafnium; RADFET; alpha radiation; dosimetry; ion implantation;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131459
Filename
6131459
Link To Document