Title :
The electrical properties and epitaxial growth of LiNbO3 films by the MOD process
Author :
Vest, R.W. ; Wu, R. C Richard
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
Lithium niobate films with grain sizes of 85 to 300 nm were prepared by the metallo-organic decomposition process on (110) sapphire substrates. The films were crack-free for single layer-fired thicknesses of 250 nm or less and had good transparency for grain sizes of 150 nm or less. Near 100% preferred (110) grain orientation was achieved by carrying out the thermal processing at a low oxygen partial pressure, and the films could be reoxidized without affecting the preferred orientation. The dielectric constants and dissipation factors were measured as a function of frequency for two different grain size LiNbO 3 films, and the divergence from single-crystal results for small grain size films is explained on the basis of interfacial polarization
Keywords :
dielectric polarisation; epitaxial growth; ferroelectric thin films; grain size; lithium compounds; oxidation; permittivity; (110) grain orientation; 85 to 300 nm; LiNbO3; crack-free; dielectric constants; dissipation factors; epitaxial growth; ferroelectrics; films; grain sizes; interfacial polarization; metallo-organic decomposition; reoxidized; single layer-fired thicknesses; thermal processing; transparency; Birefringence; Epitaxial growth; Grain size; Integrated optics; Molecular beam epitaxial growth; Optical films; Optical waveguides; Piezoelectric films; Sputtering; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200218