Integration of UHV-grown ferroelectric films into nonvolatile memories

Author

Lampe, D.R. ; Sinharoy, S. ; Stepke, E. ; Buhay, H.

Author_Institution

Westinghouse Adv. Technol. Div., Baltimore, MD, USA

fYear

1990

fDate

6-8 Jun 1990

Firstpage

177

Lastpage

180

Abstract

Experimental evidence collected and evaluated during the preliminary development of a FEMFET (ferroelectric memory FET) is presented. In addition to microstructural characterization and ferroelectric polarization measurements, capacitance-voltage (C-V) measurements of several BaMgF₄ films grown under various conditions (ultrahigh vacuum (UHV) vs. regular high vacuum) were performed. The C-V hysteresis loops of the UHV-grown films showed that not only can the semiconductor conductivity be modulated directly through polarization reversal in the fluoride film, but also the saturated memory window is virtually undiminished after 10⁷ switching cycles. The initial steps used to develop the integration of the FEMFET into a certified 1-μm CMOS VLSIC process and the results achieved to date are reported

Keywords

barium compounds; dielectric polarisation; ferroelectric devices; ferroelectric storage; ferroelectric switching; ferroelectric thin films; field effect transistors; magnesium compounds; vacuum deposited coatings; BaMgF₄; C-V hysteresis loops; UHV-grown films; ferroelectric memory FET; ferroelectric polarization; microstructural characterization; nonvolatile memory; polarization reversal; saturated memory window; semiconductor conductivity; switching cycles; Capacitance measurement; Capacitance-voltage characteristics; Conductive films; FETs; Ferroelectric films; Ferroelectric materials; Hysteresis; Nonvolatile memory; Polarization; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200219

Filename

200219