Title :
Integration of UHV-grown ferroelectric films into nonvolatile memories
Author :
Lampe, D.R. ; Sinharoy, S. ; Stepke, E. ; Buhay, H.
Author_Institution :
Westinghouse Adv. Technol. Div., Baltimore, MD, USA
Abstract :
Experimental evidence collected and evaluated during the preliminary development of a FEMFET (ferroelectric memory FET) is presented. In addition to microstructural characterization and ferroelectric polarization measurements, capacitance-voltage (C-V) measurements of several BaMgF4 films grown under various conditions (ultrahigh vacuum (UHV) vs. regular high vacuum) were performed. The C-V hysteresis loops of the UHV-grown films showed that not only can the semiconductor conductivity be modulated directly through polarization reversal in the fluoride film, but also the saturated memory window is virtually undiminished after 107 switching cycles. The initial steps used to develop the integration of the FEMFET into a certified 1-μm CMOS VLSIC process and the results achieved to date are reported
Keywords :
barium compounds; dielectric polarisation; ferroelectric devices; ferroelectric storage; ferroelectric switching; ferroelectric thin films; field effect transistors; magnesium compounds; vacuum deposited coatings; BaMgF4; C-V hysteresis loops; UHV-grown films; ferroelectric memory FET; ferroelectric polarization; microstructural characterization; nonvolatile memory; polarization reversal; saturated memory window; semiconductor conductivity; switching cycles; Capacitance measurement; Capacitance-voltage characteristics; Conductive films; FETs; Ferroelectric films; Ferroelectric materials; Hysteresis; Nonvolatile memory; Polarization; Semiconductor films;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200219
