DocumentCode
3035287
Title
Impurity doping effect on electric field induced strains in (Pb,Ba) (Zr,Ti)O3
Author
Hagimura, A. ; Nakajima, M. ; Miyata, K. ; Uchino, B.
Author_Institution
Mitsui Toatsu Chemicals Inc., Kanagawa, Japan
fYear
1990
fDate
6-8 Jun 1990
Firstpage
185
Lastpage
188
Abstract
The doping effect of various rare-earth metals on electric field strains was investigated in (Pb,Ba) (Zr,Ti)O3 ceramics. The ceramics doped with La, Ce or Pr, whose ionic radius is larger than that of Nd exhibited soft piezoelectric properties. The ceramics doped with Dy, Gd, Er, or Y of smaller ionic size showed hard piezoelectric characteristics. The induced strain was greatest around the boundary samples between the soft and hard types. The maximum strain under an electric field of 1 kV/mm reached up to 0.13% for the ceramics doped with Nd. The dependence of the electric field induced strain on the doping amount and temperature has also been investigated
Keywords
barium compounds; ceramics; deformation; impurities; lead compounds; piezoelectricity; rare earth metals; Pb1-xBaxZr1-yTiyO 3:Ce; Pb1-xBaxZr1-yTiyO 3:Dy; Pb1-xBaxZr1-yTiyO 3:Er; Pb1-xBaxZr1-yTiyO 3:Gd; Pb1-xBaxZr1-yTiyO 3:La; Pb1-xBaxZr1-yTiyO 3:Nd; Pb1-xBaxZr1-yTiyO 3:Pr; ceramics; doping effect; electric field strains; hard piezoelectric characteristics; soft piezoelectric properties; Capacitive sensors; Ceramics; Chemicals; Doping; Electrostriction; Erbium; Impurities; Neodymium; Piezoelectric actuators; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200221
Filename
200221
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