Title :
Scanning capacitance microscopy analysis of dram trench capacitors
Author :
Pey, K.L. ; Strausser, Y.E. ; Erickson, A.N. ; Leslie, A.J. ; Beh, M.T.F. ; Sheng, T.T.
Author_Institution :
Institute of Microelectronics
Keywords :
Atomic force microscopy; Capacitance; Capacitive sensors; Capacitors; Probes; Random access memory; Sensor phenomena and characterization; Silicon; Substrates; Voltage;
Conference_Titel :
Memory Technology, Design and Testing, 1996. Records of the 1996 IEEE International Workshop on
Print_ISBN :
0-8186-7466-0
DOI :
10.1109/MTDT.1996.782496
