60 GHz OOK Transmitter in 32 nm DG FinFET technology

There are several 60 GHz transceiver architectures that have been explored and reported in the past employing the On Off Keying (OOK) Modulation. All of these designs are primarily based on the conventional bulk CMOS architecture. In this paper, we propose a power efficient double gate (DG) MOSFET based OOK Transmitter in 32 nm DG FinFET technology. The proposed novel OOK modulator consists of only two DG-MOSFETs, making the circuit extremely power and area efficient. The LC oscillator can be tuned via back gate bias to vary the amplitude as well as frequency. The phase noise of the oscillator has a value of -133 dBc/Hz which is comparable to LC oscillator in conventional CMOS. The wide band power amplifier (PA) in addition to tunable characteristics also excels in other figures of merit such as gain (6-8 dB) and 3-dB bandwidth (>; 40 GHz) when compared to some recent works.