DocumentCode
3035413
Title
The evolution of scaling from the homogeneous era to the heterogeneous era
Author
Bohr, Mark
Author_Institution
Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
Traditional MOSFET scaling served our industry well for more than three decades by providing continuous improvements in transistor performance, power and cost. This was the era of homogeneous scaling where similar materials and device structures were scaled from generation to generation and served a wide range of integrated circuits from memory to logic applications. Traditional scaling ran out of steam in the early 2000s due mainly to the inability to further scale the SiO2 gate oxide and this ushered in the beginning of the heterogeneous era where new materials and new device structures are being continually introduced to deliver the expected benefits of scaling. Going forward, an ever wider range of device types will be needed and the challenge we face is how to identify, develop and manufacture these revolutionary devices, and also how to integrate heterogeneous devices into compelling products.
Keywords
MOSFET; silicon compounds; MOSFET scaling; SiO2; device structures; gate oxide; heterogeneous devices; heterogeneous era scaling; homogeneous era scaling; integrated circuits; transistor performance; High K dielectric materials; Logic gates; Metals; Performance evaluation; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131469
Filename
6131469
Link To Document