• DocumentCode
    3035413
  • Title

    The evolution of scaling from the homogeneous era to the heterogeneous era

  • Author

    Bohr, Mark

  • Author_Institution
    Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    Traditional MOSFET scaling served our industry well for more than three decades by providing continuous improvements in transistor performance, power and cost. This was the era of homogeneous scaling where similar materials and device structures were scaled from generation to generation and served a wide range of integrated circuits from memory to logic applications. Traditional scaling ran out of steam in the early 2000s due mainly to the inability to further scale the SiO2 gate oxide and this ushered in the beginning of the heterogeneous era where new materials and new device structures are being continually introduced to deliver the expected benefits of scaling. Going forward, an ever wider range of device types will be needed and the challenge we face is how to identify, develop and manufacture these revolutionary devices, and also how to integrate heterogeneous devices into compelling products.
  • Keywords
    MOSFET; silicon compounds; MOSFET scaling; SiO2; device structures; gate oxide; heterogeneous devices; heterogeneous era scaling; homogeneous era scaling; integrated circuits; transistor performance; High K dielectric materials; Logic gates; Metals; Performance evaluation; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131469
  • Filename
    6131469