Title :
Wet thermal oxidation of AlInAs and AlAsSb alloys lattice-matched to InP
Author :
Legay, P. ; Petit, P. ; Debray, J.P. ; Kohl, A. ; Patriarche, G. ; Le Roux, G. ; Juhel, M. ; Quillec, M.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
The wet thermal oxidation of AlAsSb and AlInAs lattice-matched to InP is investigated. The oxidation kinetics are determined as a function of temperature and oxidation duration for both materials. The Al content in the material is found to modify the kinetics: the higher it is, the lower the oxidation temperature which can be used. Both oxides are characterised by optical and electron microscopy, by SIMS and by X-ray diffraction. High oxidation selectivity towards the other materials is obtained with AlAsSb. However, an interfacial layer, composed of pure Sb and As and textured on InP, forms during the oxidation process. In contrast, during AlInAs oxidation, such interfacial layer do not form but the oxidation selectivity is not so good. Finally, the electrical characteristics of the AlAsSb oxide are determined
Keywords :
III-V semiconductors; MIS structures; X-ray diffraction; aluminium compounds; electrical resistivity; electron microscopy; indium compounds; optical microscopy; oxidation; secondary ion mass spectra; semiconductor technology; AlAsSb; AlInAs; InP; SIMS; VCSEL application; X-ray diffraction; electrical characteristics; electron microscopy; interfacial layer; kinetics; lattice-matching; optical microscopy; oxidation duration; oxidation kinetics; oxidation selectivity; oxidation temperature; temperature dependence; wet thermal oxidation; Electron microscopy; Electron optics; Indium phosphide; Kinetic theory; Optical diffraction; Optical materials; Optical microscopy; Oxidation; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600234
