High-power quantum-well InGaAsP/InP lasers and their coupling with the optical fibers

Author

Alferov, Z.I. ; Garbuzov, D.Z. ; Ovchinnikov, Andrey V. ; Pikhtin, Nikita A. ; Tarasov, Ilya S.

Author_Institution

A.F. Ioffe Phys.-Tech. inst., Acad. of Sci., Leningrad

fYear

1990

fDate

16-19 Apr 1990

Abstract

Summary form only given. An investigation of high-power broad-stripe lasers and the possibility of their effective coupling with multimode optical fiber was carried out. Laser wafers were grown by a modified LPE (liquid-phase-epitaxy) growth technique utilizing short-term active layer deposition on a moving substrate. Optical fibers with central core diameters of 50, 100, and 200 μm and NALFA of 0.2 were used for coupling. The maximum values of coupled power for these three fibers were 0.3, 0.39, and 0.44 W for a 1-A driving current through a 60-μm micrometer-stripe diode. In the case of a 100-μm-strip diode with 2-A driving current, coupled powers of about 0.7 and 0.9 W were obtained for fibers with 100- and 200-μm core diameters, respectively

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fibres; semiconductor junction lasers; 0.3 to 0.9 W; 1 A; 2 A; 50 to 200 micron; InGaAsP-InP; broad-stripe lasers; central core diameters; coupled power; coupling; driving current; high-power; liquid-phase-epitaxy; modified LPE growth; moving substrate; multimode optical fiber; quantum-well; semiconductor lasers; short-term active layer deposition; Diode lasers; Fiber lasers; Indium phosphide; Laser theory; Optical coupling; Optical fibers; Potential well; Power generation; Power lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1990. ICC '90, Including Supercomm Technical Sessions. SUPERCOMM/ICC '90. Conference Record., IEEE International Conference on

Conference_Location

Atlanta, GA

Type

conf

DOI

10.1109/ICC.1990.117066

Filename

117066