Title :
Preparation and properties of sol-gel derived Pb[(Mg1/3Nb2/3)1-xTix]O 3 and Pb[(Zn1/3Nb2/3)1-xTi x]O3 thin layers
Author :
Francis, Lorraine Falter ; Payne, D.A.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
Alkoxide-based solutions with compositions in the Pb[(Mg1/3 Nb2/3)1-xTix]O3 (PMNT) and Pb[(Zn1/3Nb) Tix]O3 (PZNT) systems were synthesized and used for the integration of thin layer dielectrics on platinized Si. A multilayering spin-casting method was used with rapid thermal processing of individual layers. Thin layers of each composition could be formed into a nonferroelectric pyrochlore phase or a ferroelectric perovskite phase depending upon processing conditions. Compositions containing greater amounts of PMN or PZN required higher processing temperatures for perovskite formation. The effects of composition and thermal processing conditions on the development and structure of crystalline phases, and dielectric properties are reported
Keywords :
crystal microstructure; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; rapid thermal processing; sol-gel processing; PMNT; PZNT; Pb[(Mg1/3Nb2/3)1-xTix ]O3; Pb[(Zn1/3Nb) Tix]O3; Pt-Si; alkoxide-based solution; coercive force; compositions; crystalline phases; dielectric properties; ferroelectric perovskite phase; integration; microstructure; multilayering spin-casting method; nonferroelectric pyrochlore phase; permittivity; perovskite formation; platinized Si; polarisation; preparation; processing temperatures; rapid thermal processing; sol-gel processing; structure; thermal processing conditions; thin layer dielectrics; Ceramics; Crystallization; Dielectric materials; Ferroelectric materials; High-K gate dielectrics; Lead; Niobium; Random access memory; Rapid thermal processing; Zinc;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200238
