DocumentCode
3035658
Title
Metal etch with HI-addition to conventional chemistry
Author
Frank, W.E.
Author_Institution
Semicond. Div., Siemens AG, Munich, Germany
fYear
1995
fDate
6-8 June 1995
Firstpage
91
Lastpage
92
Abstract
The photoresist selectivity is known to increase by changing from chlorine- to bromine-based etchants. Therefore, skipping to iodine-based etchants should result in further enhancement of photoresist selectivity. This is corroborated by a very high photoresist selectivity of the iodine-based etchant HI. Since HI is also the only iodine containing compound with a sufficient vapor pressure for plasma etching, HI should be the etchant of choice for a new aluminum etch process.
Keywords
VLSI; aluminium; hydrogen compounds; integrated circuit metallisation; photoresists; sputter etching; Al; HI; iodine-based etchants; metal etch process; photoresist selectivity; plasma etching; vapor pressure; Aluminum alloys; Chemistry; Dry etching; Optical interferometry; Passivation; Plasma applications; Plasma temperature; Resists; Spectral analysis; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-2602-4
Type
conf
DOI
10.1109/VLSIT.1995.520873
Filename
520873
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