Title :
Metal etch with HI-addition to conventional chemistry
Author_Institution :
Semicond. Div., Siemens AG, Munich, Germany
Abstract :
The photoresist selectivity is known to increase by changing from chlorine- to bromine-based etchants. Therefore, skipping to iodine-based etchants should result in further enhancement of photoresist selectivity. This is corroborated by a very high photoresist selectivity of the iodine-based etchant HI. Since HI is also the only iodine containing compound with a sufficient vapor pressure for plasma etching, HI should be the etchant of choice for a new aluminum etch process.
Keywords :
VLSI; aluminium; hydrogen compounds; integrated circuit metallisation; photoresists; sputter etching; Al; HI; iodine-based etchants; metal etch process; photoresist selectivity; plasma etching; vapor pressure; Aluminum alloys; Chemistry; Dry etching; Optical interferometry; Passivation; Plasma applications; Plasma temperature; Resists; Spectral analysis; Tin;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520873
