Title :
Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films
Author :
Fonthal, F. ; Goyes, C. ; Rodroguez, A.
Author_Institution :
Adv. Mater. for Micro & Nanotechnol. Group, Univ. Autonoma de Occidente, Cali
fDate :
Sept. 30 2008-Oct. 3 2008
Abstract :
In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100>substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.
Keywords :
electrical conductivity; electrochemistry; equivalent circuits; etching; porous semiconductors; silicon; thermistors; thermoelectricity; electrical equivalent circuit; electrical transport; electrochemical etching; impedance analysis; p-type silicon substrates; porous silicon thin films; thermo-electrical behavior; Conductivity; Contacts; Etching; Gold; Impedance; Mechanical factors; Semiconductor thin films; Silicon; Surface fitting; Temperature dependence; Electrical conductivity; Electrical equivalent circuit; Electrochemical etching; Metal-semiconductor-metal structure; Porous Silicon;
Conference_Titel :
Electronics, Robotics and Automotive Mechanics Conference, 2008. CERMA '08
Conference_Location :
Morelos
Print_ISBN :
978-0-7695-3320-9
DOI :
10.1109/CERMA.2008.62
