Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films

Author

Fonthal, F. ; Goyes, C. ; Rodroguez, A.

Author_Institution

Adv. Mater. for Micro & Nanotechnol. Group, Univ. Autonoma de Occidente, Cali

fYear

2008

fDate

Sept. 30 2008-Oct. 3 2008

Firstpage

3

Lastpage

7

Abstract

In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100>substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.

Keywords

electrical conductivity; electrochemistry; equivalent circuits; etching; porous semiconductors; silicon; thermistors; thermoelectricity; electrical equivalent circuit; electrical transport; electrochemical etching; impedance analysis; p-type silicon substrates; porous silicon thin films; thermo-electrical behavior; Conductivity; Contacts; Etching; Gold; Impedance; Mechanical factors; Semiconductor thin films; Silicon; Surface fitting; Temperature dependence; Electrical conductivity; Electrical equivalent circuit; Electrochemical etching; Metal-semiconductor-metal structure; Porous Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Robotics and Automotive Mechanics Conference, 2008. CERMA '08

Conference_Location

Morelos

Print_ISBN

978-0-7695-3320-9

Type

conf

DOI

10.1109/CERMA.2008.62

Filename

4641038