Title :
Silicon shadow-masked MOVPE for InP-based thickness-tapered guided-wave devices
Author :
Aoki, M. ; Komori, M. ; Sate ; Taike, A. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A new fabrication method for high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. Combining a thickness-tapered InGaAsP strained multiple-quantum-well and a flared ridge-waveguide structure resulted in high power (>20 mW) and narrow beam (<13°) operation over a wide-temperature-range up to 85°C in an InGaAsP/InP 1.3-μm diode laser, which makes this technique attractive for future use in fabricating light sources for subscriber fiber communications
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; optical transmitters; quantum well lasers; ridge waveguides; semiconductor growth; thickness control; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 20 mW; 85 degC; InGaAsP-InP; InGaAsP/InP 1.3-μm diode laser; InP; InP-based thickness-tapered guided-wave devices; Si; comb-shaped silicon shadow mask; fabrication method; flared ridge-waveguide structure; high power; high-quality thickness-tapered semiconductor waveguides; in-plane thickness control; light sources; narrow beam; silicon shadow-masked MOVPE; subscriber fiber communications; thickness-tapered InGaAsP strained multiple-quantum-well; wide-temperature-range; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Laser beams; Optical device fabrication; Quantum well devices; Semiconductor waveguides; Silicon; Thickness control;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600235
