Electronic devices based on niobate barium-strontium thin film

The devices considered were based on barium-strontium niobate (BSN) films composed of Ba_0.5Sr_0.5Nb₂O ₆, which were obtained by plasmo-chemical reactions of oxide molecule formation being realized near the substrate surface. Ferroelectric thin-film technology was used with film deposition based on RF-sputtering. The electrically erasable programmable read-only memory (PROM) element was constructed on the basis of metal-ferroelectric-insulator-semiconductor (silicon) structure. Introduction of thin ferroelectric film in MIS structures with electrical memory allows parameter improvement. A read-only electrically erasable element constructed on the base of a metal-ferroelectric-metal structure is described. A memory element with a M-BSN-M structure of 2-4-μm thickness doped with isomorphic elements is proposed. An accumulation capacitor of dynamic memory element was created also on the basis of this structure. (5) An infrared pyroelectric receiver was made on the basis of the M-BSN-M structure