Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Author

Jung, Seungjae ; Siddik, Manzar ; Lee, Wootae ; Park, Jubong ; Liu, Xinjun ; Woo, Jiyong ; Choi, Godeuni ; Lee, Joonmyoung ; Lee, Nodo ; Jang, Yun Hee ; Hwang, Hyunsang

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma using Ti/Pr_0.7Ca_0.3MnO₃ (Ti/PCMO) with Ge₂Sb₂Te₅ (GST) thermoelectric heater as well as thermal barrier (Fig. 1). “Thermoelectric heating effect” from GST/Ti junction and “thermal barrier effect” from the heat confinement by GST and PCMO thermal insulators successfully improved switching speed while “large effective Schottky barrier (SB) height (Φ_eff)” provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).

Keywords

Schottky barriers; antimony compounds; calcium compounds; germanium compounds; manganese compounds; praseodymium compounds; random-access storage; switching circuits; thermal analysis; thermal insulation; thermoelectricity; titanium; Ge₂Sb₂Te₅; Ti-Pr_0.7Ca_0.3MnO₃; heat confinement; high-temperature retention characteristics; large effective Schottky barrier height; read-set-reset disturbance characteristics; retention characteristics; switching speed; thermal barrier effect; thermal insulators; thermally-assisted ReRAM device; thermally-assisted resistive switching random access memory; thermoelectric heating effect; voltage-time dilemma; Heating; Junctions; Nanoscale devices; Schottky barriers; Switches; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131483

Filename

6131483