Title :
Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
Author :
Jung, Seungjae ; Siddik, Manzar ; Lee, Wootae ; Park, Jubong ; Liu, Xinjun ; Woo, Jiyong ; Choi, Godeuni ; Lee, Joonmyoung ; Lee, Nodo ; Jang, Yun Hee ; Hwang, Hyunsang
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
Abstract :
We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). “Thermoelectric heating effect” from GST/Ti junction and “thermal barrier effect” from the heat confinement by GST and PCMO thermal insulators successfully improved switching speed while “large effective Schottky barrier (SB) height (Φeff)” provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).
Keywords :
Schottky barriers; antimony compounds; calcium compounds; germanium compounds; manganese compounds; praseodymium compounds; random-access storage; switching circuits; thermal analysis; thermal insulation; thermoelectricity; titanium; Ge2Sb2Te5; Ti-Pr0.7Ca0.3MnO3; heat confinement; high-temperature retention characteristics; large effective Schottky barrier height; read-set-reset disturbance characteristics; retention characteristics; switching speed; thermal barrier effect; thermal insulators; thermally-assisted ReRAM device; thermally-assisted resistive switching random access memory; thermoelectric heating effect; voltage-time dilemma; Heating; Junctions; Nanoscale devices; Schottky barriers; Switches; Temperature; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131483
