Quantized conductive filament formed by limited Cu source in sub-5nm era

Author

Park, J. ; Lee, W. ; Choe, M. ; Jung, S. ; Son, M. ; Kim, S. ; Park, S. ; Shin, J. ; Lee, D. ; Siddik, M. ; Woo, J. ; Choi, G. ; Cha, E. ; Lee, T. ; Hwang, H.

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2011

fDate

5-7 Dec. 2011

Abstract

For the first time, we have investigated the resistive switching characteristics in extreme size (sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel fabrication technology. Due to the limited Cu source, we observe the quantized formation of conductive path, which results in the distinguishable conductance states and shows the feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection behavior for xpoint memory application was achieved.

Keywords

atomic force microscopy; copper; electrodes; semiconductor storage; transmission electron microscopy; Cu; FIB-TEM analysis; conductance states; conductive path; conductive-AFM; quantized conductive filament; quantized formation; resistive switching; size 5 nm; xpoint memory application; Chemicals; Copper; Electrodes; Fabrication; Hafnium compounds; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131484

Filename

6131484