Title :
A smart batch type RTA technology for beyond 256 Mbit DRAM
Author :
Lee, G.G. ; Fujihara, K. ; Kim, S.J. ; Oh, C.W. ; Chung, U.I. ; Ahn, S.T. ; Lee, M.Y.
Author_Institution :
Semiconductor R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
A new hot wall type rapid thermal annealing (H-RTA) technology using a vertical batch furnace has been developed. This technology provides junctions with shallow and high concentration and slip free process with high throughput. We have demonstrated that H-RTA is a promising candidate for device fabrications beyond 256 Mbit DRAM in cost as well as in performance.
Keywords :
DRAM chips; batch processing (industrial); integrated circuit manufacture; rapid thermal annealing; resistance furnaces; DRAM; H-RTA technology; device fabrication; hot wall type; rapid thermal annealing; slip free process; smart batch; throughput; vertical batch furnace; Annealing; CMOS technology; Fabrication; Furnaces; Heating; Lamps; Random access memory; Reproducibility of results; Temperature; Throughput;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520875
