Title :
Valence-band offset in ultra-thin HfO2 film on Si1−xGex/Si substrate
Author :
Huang, W.-C. ; Ting, H.-W. ; Hung, K.M. ; Yin, J.-H. ; Chou, K.-H. ; Chang, H.-C. ; Shieh, T.-H.
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan
Abstract :
This paper presents the first-principles study of an ultra-thin HfO2 on SiGe/Si substrate. The strong stress in hafnia layer caused by lattice mismatch significantly deforms the structure in this layer, and alters the valence-band offset between HfO2 and SiGe. These phenomena should significantly affect the properties of CMOS devices associated with an ultra-thin HfO2 dielectric film.
Keywords :
ab initio calculations; dielectric thin films; hafnium compounds; valence bands; CMOS devices; HfO2; Si1-xGex-Si; Si1-xGex-Si substrate; dielectric film; first-principles study; hafnia layer; lattice mismatch; ultrathin film; valence-band offset; Atomic layer deposition; Films; Hafnium compounds; Silicon; Silicon germanium; Stress; Substrates; HfO2; SiGe; first principles;
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
DOI :
10.1109/ICMT.2011.6002359
