• DocumentCode
    3035872
  • Title

    Valence-band offset in ultra-thin HfO2 film on Si1−xGex/Si substrate

  • Author

    Huang, W.-C. ; Ting, H.-W. ; Hung, K.M. ; Yin, J.-H. ; Chou, K.-H. ; Chang, H.-C. ; Shieh, T.-H.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    26-28 July 2011
  • Firstpage
    6660
  • Lastpage
    6661
  • Abstract
    This paper presents the first-principles study of an ultra-thin HfO2 on SiGe/Si substrate. The strong stress in hafnia layer caused by lattice mismatch significantly deforms the structure in this layer, and alters the valence-band offset between HfO2 and SiGe. These phenomena should significantly affect the properties of CMOS devices associated with an ultra-thin HfO2 dielectric film.
  • Keywords
    ab initio calculations; dielectric thin films; hafnium compounds; valence bands; CMOS devices; HfO2; Si1-xGex-Si; Si1-xGex-Si substrate; dielectric film; first-principles study; hafnia layer; lattice mismatch; ultrathin film; valence-band offset; Atomic layer deposition; Films; Hafnium compounds; Silicon; Silicon germanium; Stress; Substrates; HfO2; SiGe; first principles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multimedia Technology (ICMT), 2011 International Conference on
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-61284-771-9
  • Type

    conf

  • DOI
    10.1109/ICMT.2011.6002359
  • Filename
    6002359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3035872