Title :
Performance limits of superlattice-based steep-slope nanowire FETs
Author :
Gnani, E. ; Maiorano, P. ; Reggiani, S. ; Gnudi, A. ; Baccarani, G.
Author_Institution :
Dept. of Electron., Univ. of Bologna, Bologna, Italy
Abstract :
In this work we investigate the achievable device performance of steep-slope nanowire FETs based on the filtering of the high-energy electrons via a superlattice heterostructure in the source extension. Four material pairs are investigated for the superlattice (SL), with the aim to identify the most promising ones with respect to the typical FET evaluation metrics. We found that the InGaAs-InAlAs pair can provide an inverse subthreshold slope SS = 13 mV/dec and an on-state current ION = 4.5 mA/μm@VDD = 0.4V. These results outperform the ITRS requirements for the 21 nm technology node.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; nanoelectronics; nanowires; semiconductor superlattices; FET evaluation metrics; InGaAs-InAlAs; high-energy electron filtering; inverse subthreshold slope; size 21 nm; superlattice heterostructure; superlattice-based steep-slope nanowire FET; voltage 0.4 V; Electric potential; FETs; Logic gates; Optimization; Superlattices; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131491
