Title :
Tensile test of single crystal silicon film at elevated temperatures
Author :
Nakao, S. ; Ando, T. ; Shikida, M. ; Sato, K.
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
fDate :
31 Oct.-3 Nov. 2004
Abstract :
A tensile-testing system that allows tests at elevated temperature was developed. Using this system, we evaluated the mechanical properties of micro-scale single-crystal silicon film at 573 K. The silicon test specimens had a surface orientation of (100), and a tensile direction of <110>, The average measured Young´s modulus and fracture stress were 144 GPa and 5.19 GPa, respectively, at 573 K. At room temperature, Young´s modulus and fracture stress were 137 GPa and 4.89 GPa. These similar values show that the mechanical properties of single-crystal silicon film hardly change at 573 K compared to room temperature.
Keywords :
Young´s modulus; elemental semiconductors; fracture; micromechanical devices; semiconductor thin films; silicon; tensile testing; 20 degC; 573 K; MEMS; Si; Young modulus; elevated temperatures; fracture stress; mechanical properties; room temperature; single crystal film; surface orientation; tensile direction; tensile test; Materials testing; Mechanical factors; Mechanical variables measurement; Micromechanical devices; Semiconductor films; Silicon; Strain measurement; System testing; Temperature; Tensile stress;
Conference_Titel :
Micro-Nanomechatronics and Human Science, 2004 and The Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2004. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8607-8
DOI :
10.1109/MHS.2004.1421278