A key of self-formed barrier technique for reliability improvement of CU dual damascene interconnects

Author

Ohmori, Kazuyuki ; Mori, Kenichi ; Maekawa, Kazuyoshi ; Kohama, Kazuyuki ; Ito, Kei ; Ohnishi, Takashi ; Mizuno, M. ; Fujisawa, Masahiko ; Murakami, Masanori ; Miyatake, Hiroshi

Author_Institution

Renesas Technol. Corp., Hitachinaka, Japan

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

We have studied key factors of Ti-based self-formed barrier technique on interconnect reliability. A performance of time dependent dielectric breakdown shows superior endurance, using quite a thin Ti-based self-formed barrier. However, to achieve a superior electromigration performance using Ti-based self-formed barrier, much more amount of Ti is needed compared with that of TDDB performance. This is why the control of excess Ti atoms is important to suppress the electromigration. We also discuss the mechanism that why the excess Ti improve reliability performance.

Keywords

copper; electromigration; integrated circuit interconnections; reliability; titanium; Cu; Cu dual damascene interconnects; Ti; Ti-based self-formed barrier technique; electromigration performance; interconnect reliability; reliability improvement; thin Ti-based self-formed barrier; time dependent dielectric breakdown; Annealing; Atomic layer deposition; Chemical vapor deposition; Dielectric breakdown; Electromigration; Failure analysis; Materials reliability; Materials science and technology; Reliability engineering; Steel;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510585

Filename

5510585