Accurate modeling of Coulombic scattering, and its impact on scaled MOSFETs

The importance of modeling Coulombic scattering in MOS inversion layers is established by demonstrating its impact on critical design parameters such as V/sub T/ and I/sub off/. An accurate model for Coulombic scattering has been developed that, for the first time, properly accounts for 2D confinement and quantum mechanical effects in the inversion layer, thus disproving the viability of 3D classical models. In regimes where 3D models grossly over predict mobility, the new 2D model demonstrates its broad applicability by accurately reproducing experimental results over a wide range of channel dopings, substrate biases, and inversion charge densities.