Title :
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Author :
Mody, J. ; Zschätzsch, G. ; Kölling, S. ; De Keersgieter, A. ; Eneman, G. ; Kambham, A.K. ; Drijbooms, C. ; Schulze, A. ; Chiarella, T. ; Horiguchi, N. ; Hoffmann, T.-Y. ; Eyben, P. ; Vandervorst, W.
Author_Institution :
Imec vzw, Heverlee, Belgium
Abstract :
In this work, we demonstrate for the first time 3D-carrier profiling in FinFETs with nm-spatial resolution using SSRM. The results provide information on gate underlap, dopant conformality, source/drain doping profiles. The 3D-carrier profiles as extracted for two different device approaches (extensions vs. extension-less) are conclusive in demonstrating the differences in device performance and are consistent with first order 3D-simulations.
Keywords :
MOSFET; scanning electron microscopy; 3D-carrier profiles; FinFET; cross-sectional SEM image; dopant conformality; first order 3D-simulations; gate underlap; scanning spreading resistance microscopy; source-drain doping profiles; Correlation; Doping; FinFETs; Implants; Logic gates; Performance evaluation; Resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131498
