Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography

Electron holography (EH) cross-sectional observations were used to delineate terminal-voltage induced changes in an electrostatic potential distribution in a MOSFET under operating conditions. Gate and drain voltages were applied to a 25-nm-gate-length MOSFET during EH observations to investigate how the terminal-voltage application changed the potential. Combined with a precise device simulation, this EH observation enables us to understand short-channel device behavior, such as drain-induced barrier-height lowering, under actual operation conditions that lead to more comprehensive and reliable device design.