An electronic model for the aging of ferroelectric capacitor ceramics

Author

Lomasov, V.N. ; Shustrov, B.A. ; Yarmarkin, V.K.

Author_Institution

Positron Res. & Manufacturing Corp., Leningrad, USSR

fYear

1990

fDate

6-8 Jun 1990

Firstpage

411

Lastpage

414

Abstract

An alternative model of the aging of ferroelectric materials is presented which is based on the idea that a dominant role in this process is played by the potential barriers at the surface of the grains of a ceramic, which arise as a result of the capture of free charge carriers by deep surface traps. The existence of such barriers was confirmed by measurements of the temperature dependencies of the electronic work function of semiconducting ceramics. The surface photo-EMF spectra obtained point to the presence of electronic states in the forbidden gap in the near-surface region of the ceramic samples. In the framework of the model suggested, theoretical estimates of aging process variables are made which agree with experimental data

Keywords

ageing; capacitors; ceramics; deep levels; ferroelectric devices; surface electron states; aging; capture; deep surface traps; electronic model; electronic work function; ferroelectric capacitor ceramics; forbidden gap; free charge carriers; grains; near-surface region; potential barriers; semiconducting ceramics; surface; surface photo-EMF spectra; temperature dependencies; Aging; Capacitors; Ceramics; Charge carriers; Electron traps; Estimation theory; Ferroelectric materials; Semiconductivity; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200274

Filename

200274