Title :
3D copper TSV integration, testing and reliability
Author :
Farooq, M.G. ; Graves-Abe, T.L. ; Landers, W.F. ; Kothandaraman, C. ; Himmel, B.A. ; Andry, P.S. ; Tsang, C.K. ; Sprogis, E. ; Volant, R.P. ; Petrarca, K.S. ; Winstel, K.R. ; Safran, J.M. ; Sullivan, T.D. ; Chen, F. ; Shapiro, M.J. ; Hannon, R. ; Liptak,
Author_Institution :
Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.
Keywords :
DRAM chips; copper; high-k dielectric thin films; integrated circuit reliability; integrated circuit testing; thermal stresses; three-dimensional integrated circuits; 3D copper TSV integration; BEOL structures; Cu; embedded DRAM; functional 3D modules; high-K-metal gate; node-agnostic Cu TSV; reliability; thermal cycling; thermal stress; Copper; Face; Random access memory; Three dimensional displays; Through-silicon vias; Wiring;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131504
