DocumentCode
3036254
Title
3D copper TSV integration, testing and reliability
Author
Farooq, M.G. ; Graves-Abe, T.L. ; Landers, W.F. ; Kothandaraman, C. ; Himmel, B.A. ; Andry, P.S. ; Tsang, C.K. ; Sprogis, E. ; Volant, R.P. ; Petrarca, K.S. ; Winstel, K.R. ; Safran, J.M. ; Sullivan, T.D. ; Chen, F. ; Shapiro, M.J. ; Hannon, R. ; Liptak,
Author_Institution
Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.
Keywords
DRAM chips; copper; high-k dielectric thin films; integrated circuit reliability; integrated circuit testing; thermal stresses; three-dimensional integrated circuits; 3D copper TSV integration; BEOL structures; Cu; embedded DRAM; functional 3D modules; high-K-metal gate; node-agnostic Cu TSV; reliability; thermal cycling; thermal stress; Copper; Face; Random access memory; Three dimensional displays; Through-silicon vias; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131504
Filename
6131504
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