Title :
Spatial variation of TSV capacitance and method of stabilization with Al2O3-induced negative fixed charge at the silicon-liner interface
Author :
Zhang, L. ; Made, R.I. ; Li, H.Y. ; Gao, S. ; Lo, G.Q. ; Kwong, D.L. ; Tan, C.S.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
Stable TSV capacitance is desired to control spatial TSV performance variation due to non-uniform hot-spot heating. Thin Al2O3 is inserted between PETEOS liner and Si substrate to induce negative fixed charge (Qf = -7.44 × 1011cm-2). This causes flat-band voltage shift (ΔVFB = +7.37 V) and the TSV is operated in the stable accumulation region within the operating voltage of interest (0-5 V). The leakage current density of this combination is reduced by 10 X with annealing in forming gas at 300°C.
Keywords :
aluminium compounds; annealing; current density; etching; integrated circuit interconnections; leakage currents; silicon; Al2O3; PETEOS liner; Si; TSV capacitance; accumulation region; flat-band voltage shift; forming gas; leakage current density; negative fixed charge; non-uniform hot-spot heating; silicon-liner interface; spatial variation; temperature 300 degC; through silicon via; Aluminum oxide; Annealing; Capacitance; Copper; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131505
