DocumentCode
3036270
Title
High power, high efficiency E-band GaN amplifier MMICs
Author
Brown, Andrew ; Brown, Kenneth ; Chen, Jiann-Jong ; Gritters, D. ; Hwang, K.C. ; Ko, Euny ; Kolias, N. ; O´Connor, S. ; Sotelo, Miguel Angel
fYear
2012
fDate
11-16 Nov. 2012
Firstpage
1
Lastpage
4
Abstract
An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author´s knowledge, these power amplifier designs demonstrate performance beyond previously published results for E-band power amplifier MMICs.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; reliability; wide band gap semiconductors; E-band power amplifier MMIC; GaN; PAE; gallium nitride semiconductor process; output power; reliability; Gallium nitride; MMICs; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Information Technology and Systems (ICWITS), 2012 IEEE International Conference on
Conference_Location
Maui, HI
Print_ISBN
978-1-4673-0947-9
Type
conf
DOI
10.1109/ICWITS.2012.6417777
Filename
6417777
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