Title :
Advances, challenges and opportunities in 3D CMOS sequential integration
Author :
Batude, P. ; Vinet, M. ; Previtali, B. ; Tabone, C. ; Xu, C. ; Mazurier, J. ; Weber, O. ; Andrieu, F. ; Tosti, L. ; Brevard, L. ; Sklenard, B. ; Coudrain, P. ; Bobba, S. ; Ben Jamaa, H. ; Gaillardon, P-E ; Pouydebasque, A. ; Thomas, O. ; Le Royer, C. ; Ha
Author_Institution :
CEA- leti, Grenoble, France
Abstract :
3D sequential integration enables the full use of the third dimension thanks to its high alignment performance. In this paper, we address the major challenges of 3D sequential integration: in particular, the control of molecular bonding allows us to obtain pristine quality top active layer. With the help of Solid Phase Epitaxy, we can match the performance of top FET, processed at low temperature (600°C), with the bottom FET devices. Finally, the development of a stable salicide enables to retain bottom performance after top FET processing. Overcoming these major technological issues offers a wide range of applications.
Keywords :
CMOS integrated circuits; field effect transistors; integrated circuit design; solid phase epitaxial growth; three-dimensional integrated circuits; 3D CMOS sequential integration; FET devices; high alignment performance; molecular bonding; solid phase epitaxy; Bonding; FETs; Hafnium compounds; Logic gates; Silicon; Three dimensional displays;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131506
