Title :
Gate current by impact ionization feedback in sub-micron MOSFET technologies
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Because gate currents, I/sub G/, are a sensitive measure of the high energy tail of the hot carrier distribution, understanding their origins is essential to understanding hot carrier effects in MOSFETs. To this end, the gate current of nMOSFETs designed for 0.1 /spl mu/m operation-tenth micron technology-has been investigated theoretically and experimentally. Monte Carlo transport simulations have identified a new I/sub G/ mechanism in these devices based on impact ionization feedback through the vertical fields of the drain substrate junction.
Keywords :
MOSFET; Monte Carlo methods; feedback; hot carriers; impact ionisation; 0.1 micron; Monte Carlo transport simulation; drain substrate junction; gate current; hot carrier distribution; impact ionization feedback; sub-micron MOSFET; Charge carrier processes; Computational modeling; Electrons; Feedback; Hafnium; Heating; Impact ionization; MOSFET circuits; Monte Carlo methods; Sliding mode control;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520877
