Title :
A novel bottom-up Ag contact (30nm diameter and 6.5 aspect ratio) technology by electroplating for 1Xnm and beyond technology
Author :
Jong, Chao-An ; Sung, Po-Jung ; Lee, Mei-Yi ; Hou, Fu-Ju ; Wu, Kehuey ; Su, Ying-Hao ; Chen, Bing-Mau ; Ho, Chia-Wei ; Chung, Ren-Jei ; Lee, Yao-Jen ; Wu, Wen-Fa ; Hu, Chenming ; Yang, Fu-Liang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Very high 6.5 aspect ratio, 30nm diameter contacts are filled with a novel bottom-up Ag electroplating technology for the first time. The technology utilizes two distinct advantages of Ag over Cu: (1) Ag has the lower metal resistivity, and (2) Ag has several orders of magnitude lower diffusivity in Si than Cu. The bottom-up deposition technology intrinsically avoids the issue of seam formation arising from sidewall deposition, and thus is very promising” for future scaled contacts, even down to single digit nano-meter technology nodes.
Keywords :
electroplating; nanocontacts; silver; Ag; aspect ratio technology; bottom-up Ag contact technology; bottom-up deposition technology; electroplating technology; magnitude lower diffusivity; metal resistivity; seam formation; sidewall deposition; single digit nanometer technology nodes; size 30 nm; Annealing; Copper; Films; Resistance; Silicon; Surface treatment; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131509