Title :
High performance 300mm backside illumination technology for continuous pixel shrinkage
Author :
Yaung, D.N. ; Hsieh, B.C. ; Wang, C.C. ; Liu, J.C. ; Wang, T.J. ; Wang, W.D. ; Chuang, C.C. ; Chao, C. ; Tu, Y.L. ; Tsai, C.S. ; Hsu, T.L. ; Ramberg, F. ; Mo, W.P. ; Rhodes, H. ; Tai, D. ; Venezia, V.C. ; Wuu, S.G.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.
Keywords :
CMOS image sensors; annealing; dielectric thin films; elemental semiconductors; integrated circuit noise; silicon; wafer-scale integration; BSI technology; CMOS image sensor process; Si; backside illumination sensor; backside junction formation; continuous pixel shrinkage; dielectric film structure; high performance backside illumination technology; optical performance; silicon thickness variation; size 0.9 mum; size 300 mm; thermal annealing; wafer distortion; Crosstalk; Laser noise; Optical distortion; Optical filters; Optical sensors; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131512
