• DocumentCode
    3036528
  • Title

    Donor impurity states in a quantum well under magnetic fields: A non-variational approach

  • Author

    Abramov, A. ; Liu, J.J. ; Luan, L.

  • Author_Institution
    Kuang-Chi Inst. of Adv. Technol., Shenzhen, China
  • fYear
    2011
  • fDate
    26-28 July 2011
  • Firstpage
    2085
  • Lastpage
    2087
  • Abstract
    We present an efficient method for calculation of the impurity binding energy in a quantum well (QW) under the magnetic field. The calculations were performed for both ground and excited states. The dependences of binding energies versus impurity position and magnetic field are presented for GaAs/Al0.3Ga0.7As QW.
  • Keywords
    III-V semiconductors; aluminium compounds; binding energy; excited states; gallium arsenide; ground states; impurity states; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; donor impurity states; excited state; ground state; impurity binding energy; nonvariational approach; quantum well; Equations; Gallium arsenide; Green´s function methods; Impurities; Magnetic fields; Quantum mechanics; Wave functions; binding energy; impurity; magnetic field; quantum well;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multimedia Technology (ICMT), 2011 International Conference on
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-61284-771-9
  • Type

    conf

  • DOI
    10.1109/ICMT.2011.6002387
  • Filename
    6002387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3036528