Title :
Donor impurity states in a quantum well under magnetic fields: A non-variational approach
Author :
Abramov, A. ; Liu, J.J. ; Luan, L.
Author_Institution :
Kuang-Chi Inst. of Adv. Technol., Shenzhen, China
Abstract :
We present an efficient method for calculation of the impurity binding energy in a quantum well (QW) under the magnetic field. The calculations were performed for both ground and excited states. The dependences of binding energies versus impurity position and magnetic field are presented for GaAs/Al0.3Ga0.7As QW.
Keywords :
III-V semiconductors; aluminium compounds; binding energy; excited states; gallium arsenide; ground states; impurity states; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; donor impurity states; excited state; ground state; impurity binding energy; nonvariational approach; quantum well; Equations; Gallium arsenide; Green´s function methods; Impurities; Magnetic fields; Quantum mechanics; Wave functions; binding energy; impurity; magnetic field; quantum well;
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
DOI :
10.1109/ICMT.2011.6002387
