Title :
Formation of InAsP layer on corrugated InP substrate by MOVPE for buried grating of DFB lasers
Author :
Kito, Masahiro ; Otsuka, N. ; Yabuuchi, Yasufumi ; Nakamura, Shinji ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Characteristics of the InAsP layer formed on a corrugated InP substrate by a mass-transport mechanism have been investigated for use as the buried grating of distributed feedback (DFB) lasers, The size of the InAsP layer can be controlled by the height of the corrugation, and the arsenic composition in the InAsP layer can be controlled by the AsH 3 partial pressure. The results of TEM, EDS and PL show that InP is suitable as the buffer layer between the InAsP layer and MQW active layer. Fabricated 1.3 μm DFB lasers which have an InAsP layer as an absorptive grating have shown low threshold current and high slope efficiency from -40-+85°C, and high reliability has been demonstrated
Keywords :
III-V semiconductors; current density; diffraction gratings; distributed feedback lasers; indium compounds; laser reliability; optical fabrication; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; vapour phase epitaxial growth; -40 to 85 degC; 1.3 mum; DFB lasers; EDS; InAsP; InAsP layer; InP; MOVPE; MQW active layer; PL; TEM; buffer layer; buried grating; corrugated InP substrate; corrugation height; distributed feedback lasers; mass-transport mechanism; Ash; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Laser feedback; Optical control; Pressure control; Size control;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600239
