Title :
Optical Probing of FinFETs
Author :
Fine, J. ; Young, Chadwin D. ; Hobbs, Chris ; Bersuker, Gennadi ; Lundquist, T. ; Tsao, C.-C.
Author_Institution :
DCG Syst., Inc., Fremont, CA, USA
Abstract :
Emission, Laser Voltage Imaging, and Laser Voltage Probing data have been acquired from dual-gate fin field-effect-transistors (FinFETs). These optical probing techniques are applied to devices measuring 25 nm at their smallest dimension. Our results demonstrate that images and data collected from FinFET structures are qualitatively similar to those from a planar transistor.
Keywords :
MOSFET; FinFET structures; dual-gate fin field-effect-transistors; emission; laser voltage imaging; laser voltage probing data; optical probing techniques; planar transistor; size 25 nm; Decision support systems; Failure analysis; Integrated circuits; MOS devices;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599121
