• DocumentCode
    3036986
  • Title

    Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms

  • Author

    Paussa, A. ; Geromel, M. ; Palestri, P. ; Bresciani, M. ; Esseni, D. ; Selmi, L.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine, Italy
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-of-the-art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.
  • Keywords
    Monte Carlo methods; electron-hole recombination; field effect transistors; nanotechnology; Monte Carlo simulator; RF graphene FET; ballistic model; band-to-band tunneling; cut-off frequency; dominant scattering mechanism; generation/recombination mechanism; graphene nanoscale RF transistor; Charge carrier processes; Cutoff frequency; FETs; Logic gates; Monte Carlo methods; Radio frequency; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131536
  • Filename
    6131536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3036986