Title :
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
Author :
Paussa, A. ; Geromel, M. ; Palestri, P. ; Bresciani, M. ; Esseni, D. ; Selmi, L.
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Abstract :
We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-of-the-art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.
Keywords :
Monte Carlo methods; electron-hole recombination; field effect transistors; nanotechnology; Monte Carlo simulator; RF graphene FET; ballistic model; band-to-band tunneling; cut-off frequency; dominant scattering mechanism; generation/recombination mechanism; graphene nanoscale RF transistor; Charge carrier processes; Cutoff frequency; FETs; Logic gates; Monte Carlo methods; Radio frequency; Scattering;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131536
