DocumentCode
3037046
Title
Physical mechanisms of endurance degradation in TMO-RRAM
Author
Chen, B. ; Lu, Y. ; Gao, B. ; Fu, Y.H. ; Zhang, F.F. ; Huang, P. ; Chen, Y.S. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Wang, Y.Y. ; Fang, Z. ; Yu, H.Y. ; Li, X. ; Wang, X.P. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify the physical origins of these endurance failures. A physically-based optimized switching mode is developed to improve the endurance of TMO-RRAM. A significantly enhanced endurance of >;109 switching cycles was demonstrated in the HfOx/TiOx/HfOx/TiOx devices.
Keywords
hafnium compounds; random-access storage; titanium compounds; HfOx-TiOx-HfOx-TiOx; TMO based RRAM; endurance failure behaviors; physical mechanisms; physically-based optimized switching mode; resistive random access memory; transitional metal oxide; Degradation; Electrical resistance measurement; Hafnium compounds; Ions; Resistance; Switches; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131539
Filename
6131539
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