DTMOS: its derivatives and variations, and their potential applications

Author

Assaderaghi, Fariborz

Author_Institution

Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA

fYear

2000

fDate

2000

Firstpage

9

Lastpage

10

Abstract

Since the first introduction of dynamic threshold voltage MOSFET (DTMOS) in 1994 (Assaderaghi et al, 1994), many novel and interesting proposals have been made regarding this device. Some of the proposals have focused on improving the original design and overcoming its limitations, while others have found circuit and system applications for it. This paper briefly reviews the DTMOS concept, and its advantages over conventional CMOS. Next, the main limitations and disadvantages of the device are touched upon, while covering some of the suggestions for optimizing the device. A rich category of circuit applications for DTMOS and its derivatives have been created in the short period following DTMOS inception. Some of the proposed circuit applications are mentioned next. Finally, the author´s views on future directions of the device are presented

Keywords

MOS integrated circuits; MOSFET; integrated circuit design; CMOS technology; DTMOS; DTMOS concept; DTMOS design; circuit applications; device optimization; dynamic threshold voltage MOSFET; system applications; Capacitance; Circuits and systems; Degradation; Diodes; MOSFET circuits; Power supplies; Proposals; Research and development; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916403

Filename

916403