Title :
Investigation of Time Domain Reflectometry (TDR) on Power Mosfet semiconductor device
Author :
Ng, Kang Kee ; Sin, C.K.
Author_Institution :
Infineon Technol. (M) Sdn. Bhd., Batu Berendam, Malaysia
Abstract :
This paper provides simple methods to characterize the Time Domain Reflectometry (TDR) signal for a Power Mosfet device. The interfaces under investigation were: die attach, die/wire and wire/lead. The study was also extended to investigate the influence of single, double and triple aluminum wire bonded Power Mosfet on the TDR signal.
Keywords :
lead bonding; power MOSFET; semiconductor device testing; time-domain reflectometry; TDR; aluminum wire bonded power MOSFET; die attach; die-wire; power MOSFET semiconductor device; time domain reflectometry; wire-lead; Decision support systems; Failure analysis; Integrated circuits; Laser theory; Wires; TDR; backside grinding; characterization; laser; mosfet; wire configuration;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599136
