Title :
High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
Author :
Egard, M. ; Ohlsson, L. ; Borg, B.M. ; Lenrick, F. ; Wallenberg, R. ; Wernersson, L.-E. ; Lind, E.
Author_Institution :
Solid State Phys., Lund Univ., Lund, Sweden
Abstract :
In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Keywords :
III-V semiconductors; MOCVD; MOSFET; gallium arsenide; indium compounds; wide band gap semiconductors; In0.53Ga0.47As; drain access regions; extrinsic transconductance; high transconductance self-aligned gate-last surface channel; highly doped source; low subthreshold swing; low temperature gate-last process scheme; metalorganic chemical vapor deposition regrowth; self-aligned MOSFET; size 140 nm; size 55 nm; Abstracts; Fires; Gold; HEMTs; Hafnium oxide; Logic gates; Performance evaluation;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131544
