Title :
Effect on regrowth interface quality of a new treatment, ACE, in a process using hydrocarbon gas RIE to fabricate InP-based BH-LD
Author :
Yamamoto, N. ; Kishi, K. ; Kondo, Y. ; Matsumoto, S. ; Kadota, Y. ; Okamoto, H. ; Mawatari, H. ; Oohashi, H. ; Suzaki, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
ACE (ammonium sulfide combined etching) is a new treatment designed for use in hydrocarbon gas RIE based fabrication of InP-based buried-heterostructure (BH) laser diodes (LD). ACE involves dipping a sample in ammonium sulfide (NH4Sx) solution at room temperature for 10 minutes and then treating it again with sulfuric acid prior to regrowth. We found that ACE improves regrowth interface quality and LD characteristics due to its ability to remove impurities incorporated during the process
Keywords :
III-V semiconductors; etching; impurity distribution; indium compounds; interface structure; leakage currents; optical fabrication; semiconductor lasers; sputter etching; 10 min; 300 K; H2SO4; InP; InP-based BH-LD fabrication; NH4S; NH4Sx combined etching; NH4Sx solution dipping; ammonium sulfide combined etching; buried-heterostructure laser diodes; forward I-V characteristics; hydrocarbon gas RIE; impurity pile-up; impurity removal; leakage current; regrowth interface quality; room temperature; sulfuric acid treatment; Diode lasers; Epitaxial growth; Etching; Fabrication; Hydrocarbons; Impurities; Plasma applications; Plasma chemistry; Plasma properties; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600242
