• DocumentCode
    3037216
  • Title

    High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching

  • Author

    Yonai, Yoshiharu ; Kanazawa, Toru ; Ikeda, Shunsuke ; Miyamoto, Yasuyuki

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    In this paper, we report InGaAs channel MOSFETs with an InP source contact. InP source contact enables the suppression of carrier starvation and the easy shrinkage of the channel length by anisotropic etching. In fabricated 50-nm InGaAs channel MOSFETs, ID = 2.4A/mm at VD=0.5V were observed. On the other hand, degradations of Vth and SS by the short channel effect were also observed. Thinner channels will be required in order to suppress this effect.
  • Keywords
    III-V semiconductors; MOSFET; etching; gallium arsenide; indium compounds; InGaAs-InP; InP anisotropic etching; channel length; high drain current InGaAs channel MOSFET; size 50 nm; source contact; thinner channel; voltage 0.5 V; Dielectrics; Electrodes; Etching; Indium gallium arsenide; Indium phosphide; Logic gates; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131545
  • Filename
    6131545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3037216