DocumentCode :
3037216
Title :
High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching
Author :
Yonai, Yoshiharu ; Kanazawa, Toru ; Ikeda, Shunsuke ; Miyamoto, Yasuyuki
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
In this paper, we report InGaAs channel MOSFETs with an InP source contact. InP source contact enables the suppression of carrier starvation and the easy shrinkage of the channel length by anisotropic etching. In fabricated 50-nm InGaAs channel MOSFETs, ID = 2.4A/mm at VD=0.5V were observed. On the other hand, degradations of Vth and SS by the short channel effect were also observed. Thinner channels will be required in order to suppress this effect.
Keywords :
III-V semiconductors; MOSFET; etching; gallium arsenide; indium compounds; InGaAs-InP; InP anisotropic etching; channel length; high drain current InGaAs channel MOSFET; size 50 nm; source contact; thinner channel; voltage 0.5 V; Dielectrics; Electrodes; Etching; Indium gallium arsenide; Indium phosphide; Logic gates; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131545
Filename :
6131545
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3037216
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