Title :
fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
Author :
Kim, Dae-Hyun ; Brar, Berinder ; del Alamo, Jesús A.
Author_Institution :
Teledyne Sci. Co. (TSC), Thousand Oaks, CA, USA
Abstract :
We have demonstrated 40-nm In0.7Ga0.3As Metamorphic HEMTs (MHEMTs) with a record value in fT. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with Lg = 40-nm exhibits VT = 0.05 V, gm,max = 2.7 mS/μm, fT = 688 GHz and fmax = 800 GHz. In addition, we have developed an analytical model of fT in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured fT. This in turns guides a realistic way to further improve fT beyond THz.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; platinum; silicon; wide band gap semiconductors; III-V high-electron mobility transistors; In0.52Al0.48As; In0.7Ga0.3As; Pt; S-D access region; Si; dual d-doping; frequency 688 GHz; frequency 800 GHz; gate sinking process; metamorphic HEMT; size 40 nm; small-signal equivalent circuit; voltage 0.05 V; Analytical models; Delay; Gallium arsenide; Heterojunction bipolar transistors; Logic gates; mHEMTs;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131548
