Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

Author

Jeon, Sanghun ; Ahn, Seung-Eon ; Song, Ihun ; Jeon, Yongwoo ; Kim, Young ; Kim, Sangwook ; Choi, Hyunsik ; Kim, Hojung ; Lee, Eunha ; Lee, Sungsik ; Nathan, Arokia ; Robertson, John ; Kim, Changjung ; Chung, U-In ; Yoo, Inkyung ; Kim, Kinam

Author_Institution

Semicond. Device Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2011

fDate

5-7 Dec. 2011

Abstract

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V_T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V_T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency.

Keywords

image sensors; indium compounds; phototransistors; semiconductor device models; semiconductor device noise; semiconductor device reliability; thin film transistors; zinc compounds; InZnO; NBITS reliability; bilayer oxide channel; dual gate photo TFT; dual gate photothin film transistor; electrical characteristic; high reliability low noise flat panel transparent imager; negative bias illumination temperature stress reliability; optical characteristic; optical transparency; photoconductive gain; phototransistor photosensitivity; threshold voltage control; top transparent gate control; Electrodes; Logic gates; Noise; Photoconductivity; Reliability; Stress; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131551

Filename

6131551