DocumentCode :
3037342
Title :
Electrical properties and defect structure of polycrystalline doped barium titanium niobate
Author :
Spears, M.A. ; Tuller, H.L.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
636
Lastpage :
639
Abstract :
The authors present the preliminary results of a study of the defect chemistry of barium titanium niobate (BTN) and Ba6-1.5xLaxTi2Nb8O30 (BLTN). A preliminary model for the defect chemistry of BLTN is presented, and the trends in conductivity with composition, temperature, and p02 are shown, for sintered compacts of BLTN with lanthanum content from 0% to 20%. The major lattice defects in these compositions are tentatively identified, and an estimate of the thermal bandgap is derived
Keywords :
barium compounds; crystal defects; electrical conductivity of crystalline semiconductors and insulators; energy gap; titanium compounds; BLTN; BTN; Ba6-1.5xLaxTi2Nb8O 30; Ba6Ti2Nb8O30; conductivity; defect chemistry; defect structure; electrical properties; lattice defects; polycrystalline doped material; sintered compacts; thermal bandgap; Barium; Chemistry; Conducting materials; Conductivity; Electrons; Ferroelectric materials; Lanthanum; Niobium compounds; Titanium; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200333
Filename :
200333
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3037342
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